12" DIRECT / HYBRID BONDER
LTRIN3000
Void-free Bonding
3-Module Architecture
300mm Ready
A 300mm-capable automated Direct/Hybrid Bonder built around a three-module architecture — a Cleanable Plasma & Cleaning Hybrid
Module, a Wafer Bonding Module, and an IR Inspection Module — for void-free, high-yield bonding. Combined with Real-view alignment
and RF induction heating, LTRIN3000 targets Sub-100nm overlay performance.
Wafer Size
8" ~ 12" compatible
Bonding Strength
≥ 2.3 J/m²
Process
Void-free, room-temp, low vacuum
Inspection
Automatic defect inspection (IR)
8" THERMOCOMPRESSIVE (TC) BONDER FOR CIS
LTRIN2000
Production-qualified
CIS Specialized
An 8" thermocompression (TC) bonder specialized for CIS (image sensor) wafers, combining RF induction heating with
in-situ alignment and bonding in a single chamber. Production-qualified and approved on a major domestic manufacturer's line.
Heating
RF Induction, < 550℃
Heating Rate
> 120℃/min (max. 230℃/min)
Pressing
Servo Press, max. 60 kN
Alignment Accuracy
< ± 1.0 µm
Repeatable Accuracy
< ± 0.5 µm
Chamber
Pressurized, < 2,000 torr / 4-gas ports
8" TC BONDER FOR MEMS
Morian200RA
World-first RF Induction Heater
MEMS Specialized
An 8" TC bonder specialized for MEMS wafer bonding, featuring the world's first commercialized RF induction heater.
A wide, precisely controllable heating-rate range gives excellent results on warpage-sensitive substrates.
Heating Rate
45 ~ 200℃/min (variable)
Max Heating Rate
Up to 230℃/min
Rapid Heating
RT → 550℃ at 200℃/min+
Sizes Supported
4" / 6" / 8" / 12"
MANUAL WAFER / DIE BONDER
Manual Bonder
AuSn Eutectic Bonding
Void-free / Anti-scratch
A manual bonder for high-strength AuSn eutectic bonding, delivering void-free, anti-scratch bonds verified by SAM and SEM
inspection — well suited for hermetic packaging and specialty die/wafer bonding applications.
Bonding Type
AuSn Eutectic (e.g. Au80%Sn20%)
Pressure Uniformity
< ± 3%
SUB-100NM HYBRID BONDER